64-1793-97 [Discontinued]IPB65R660CFDATMA1 N-Channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK Infineon IPB65R660CFDATMA1
Features
- Infineon CoolMOS™ CFD Power MOSFET
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:700 V
- Maximum Drain Source Resistance:660 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Typical Gate Charge @ Vgs:22 nC
- CODE No.:897-7444
| Order No. | 64-1793-97 | |
|---|---|---|
| Model No. | IPB65R660CFDATMA1 | |
| Standard price |
JPY: 1,870
USD: 11.72
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPB65R660CFDATMA1 N-Channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK Infineon IPB65R660CFDATMA1](https://aimg.as-1.co.jp/c/64/1793/97/64179396.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)