AS ONE AS ONE

Listed products : 3 milion productsListed products : 3 milion products"init"> ［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1 64-1793-52 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

Listed products : 3 milion products
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Infineon

64-1793-52　［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1

Features

  • SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Spec

  • Quantity:1set(3000pieces)
  • Transistor Type:NPN
  • Maximum DC Collector Current:150 mA
  • Maximum Collector Emitter Voltage:13 V
  • Package Type:TSFP
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:500 mW
  • Minimum DC Current Gain:110
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:13 V
  • Maximum Emitter Base Voltage:1.2 V
  • Pin Count:4
  • Number of Elements per Chip:1
  • Width:0.8mm
  • CODE No.:165-8078
  •  
Order No.Order No.ss="init"> ［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1 64-1793-52 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
Infineon

64-1793-52　［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1

特徴

  • SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

仕様

  • Quantity:1set(3000pieces)
  • Transistor Type:NPN
  • Maximum DC Collector Current:150 mA
  • Maximum Collector Emitter Voltage:13 V
  • Package Type:TSFP
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:500 mW
  • Minimum DC Current Gain:110
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:13 V
  • Maximum Emitter Base Voltage:1.2 V
  • Pin Count:4
  • Number of Elements per Chip:1
  • Width:0.8mm
  • CODE No.:165-8078
  •  
Order No.Order No.ss="init"> ［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1 64-1793-52 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
Infineon

64-1793-52　［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP　BFP650FH6327XTSA1

特徴

  • SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

仕様

  • Quantity:1set(3000pieces)
  • Transistor Type:NPN
  • Maximum DC Collector Current:150 mA
  • Maximum Collector Emitter Voltage:13 V
  • Package Type:TSFP
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:500 mW
  • Minimum DC Current Gain:110
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:13 V
  • Maximum Emitter Base Voltage:1.2 V
  • Pin Count:4
  • Number of Elements per Chip:1
  • Width:0.8mm
  • CODE No.:165-8078
  •  
アズワン品番 64-1793-52
Model No. BFP650FH6327XTSA1
Standard price JPY: 96,600 USD: 601.05
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(3000pieces)
  Discontinued
在庫数 -

[$1]［Discontinued］Infineon BFP650FH6327XTSA1 NPN Transistor, 150 mA, 13 V, 4-Pin TSFP[/$1]