64-1793-32 ［Discontinued］IPD78CN10NGATMA1 N-Channel MOSFET, 13 A, 100 V OptiMOS 2, 3-Pin DPAK Infineon IPD78CN10NGATMA1
特徴
- Infineon OptiMOS™2 Power MOSFET Family. Infineon s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
仕様
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:13 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:78 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:31 W
- Maximum Operating Temperature:+175 °C
- CODE No.:165-8059
| Order No. | 64-1793-32 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | IPD78CN10NGATMA1 | |||||||||||||||
| 標準価格 |
JPY: 104,000
USD: 652.37
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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64-1793-32 ［Discontinued］IPD78CN10NGATMA1 N-Channel MOSFET, 13 A, 100 V OptiMOS 2, 3-Pin DPAK Infineon IPD78CN10NGATMA1特徴
仕様
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