64-1778-63 ［Discontinued］BSP321PH6327XTSA1 P-Channel MOSFET, 980 mA, 100 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP321PH6327XTSA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:980 mA
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:900 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1.8 W
- Typical Turn-On Delay Time:5.9 ns
- CODE No.:892-2361
| Order No. | 64-1778-63 | |
|---|---|---|
| Model No. | BSP321PH6327XTSA1 | |
| Standard price |
JPY: 2,110
USD: 13.13
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |