64-1778-52 IPP180N10N3GXKSA1 N-Channel MOSFET, 43 A, 100 V OptiMOS 3, 3-Pin TO-220 Infineon IPP180N10N3GXKSA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:43 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:33 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:71 W
- Number of Elements per Chip:1
- CODE No.:892-2318
| Order No. | 64-1778-52 | |
|---|---|---|
| Model No. | IPP180N10N3GXKSA1 | |
| Standard price |
JPY: 2,010
USD: 12.61
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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