64-1778-41 [Discontinued]BF998E6327HTSA1 N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1
Features
- Infineon Dual-gate MOSFET Tetrode. Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 mA
- Maximum Drain Source Voltage:12 V
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-2.5 V, -2 V
- Package Type:SOT-143
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Category:MOSFET Tetrode
- Maximum Power Dissipation:200 mW
- Width:1mm
- CODE No.:165-8252
| Order No. | 64-1778-41 | |
|---|---|---|
| Model No. | BF998E6327HTSA1 | |
| Standard price |
JPY: 54,300
USD: 340.38
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BF998E6327HTSA1 N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1](https://aimg.as-1.co.jp/c/64/1778/41/64177841.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)