64-1777-97 [Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
FeaturesFeatures class="init">
[Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1 64-1777-97 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1777-97 [Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
Features
- Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:94 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5313
-
Order No.Order No.ss="init">
[Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1 64-1777-97 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1777-97 [Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
特徴
- Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)
仕様
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:94 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5313
-
アズワン品番
64-1777-97
Model No.
IPB80N03S4L03ATMA1
標準価格
JPY: 101,080
USD: 628.92
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1set(1000pieces)
在庫数
-
64-1777-97 [Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1
Features
- Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:94 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5313
Order No.Order No.ss="init">
64-1777-97 [Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1特徴
仕様
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![[Discontinued]IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon IPB80N03S4L03ATMA1](https://aimg.as-1.co.jp/c/64/1777/97/64177797.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)