64-1777-89 IPI086N10N3GXKSA1 N-Channel MOSFET, 80 A, 100 V OptiMOS 3, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:15.4 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Height:11.177mm
- CODE No.:892-2166
| Order No. | 64-1777-89 | |
|---|---|---|
| Model No. | IPI086N10N3GXKSA1 | |
| Standard price |
JPY: 2,320
USD: 14.54
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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