64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1
FeaturesFeatures class="init">
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1 【AXEL GLOBAL】 アズワン
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Infineon
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3.2 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:188 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-8902
-
Order No.
64-1777-66
型番
IPP032N06N3GXKSA1
標準価格
JPY: 14,300
USD: 89.70
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(50pieces)
Stock in Japan
Supplier StockSupplier Stock"init">
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3.2 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:188 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-8902
-
アズワン品番
64-1777-66
型番
IPP032N06N3GXKSA1
標準価格
JPY: 14,300
USD: 89.70
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1set(50pieces)
在庫数
サプライヤ在庫
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3.2 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:188 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-8902
| Order No. | 64-1777-66 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | IPP032N06N3GXKSA1 | ||||||||||||||
| 標準価格 |
JPY: 14,300
USD: 89.70
Excange rate 1USD= 159.42JPY
Valid price in Japan |
||||||||||||||
| Quantity | 1set(50pieces) | ||||||||||||||
| Stock in Japan |
|
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Supplier StockSupplier Stock"init">
64-1777-66 IPP032N06N3GXKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin TO-220 Infineon IPP032N06N3GXKSA1特徴
仕様
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