Infineon

64-1777-65　［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1

印刷

Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:120 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:3.2 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:I2PAK (TO-262)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:188 W
Forward Diode Voltage:1.2V
CODE No.:892-2090

Order No. 64-1777-65

Model No. IPI032N06N3GAKSA1

Standard price

JPY: 1,520 USD: 9.54

Excange rate 1USD= 159.42JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1 64-1777-65 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Infineon

64-1777-65　［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1

印刷

特徴

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:120 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:3.2 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:I2PAK (TO-262)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:188 W
Forward Diode Voltage:1.2V
CODE No.:892-2090

アズワン品番	64-1777-65
型番	IPI032N06N3GAKSA1
標準価格	JPY: 1,520 USD: 9.54 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(5pieces)

Stock in Japan	-

This page is the page of ［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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About usAbout usinit"> ［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1 64-1777-65 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1777-65　［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1

印刷

特徴

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:120 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:3.2 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:I2PAK (TO-262)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:188 W
Forward Diode Voltage:1.2V
CODE No.:892-2090

アズワン品番	64-1777-65
型番	IPI032N06N3GAKSA1
標準価格	JPY: 1,520 USD: 9.54 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(5pieces)

在庫数	-

[$1]［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon[/$1]

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Privacy PolicyASONEs="init"> ［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1 64-1777-65 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

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Infineon

64-1777-65　［Discontinued］IPI032N06N3GAKSA1 N-Channel MOSFET, 120 A, 60 V OptiMOS 3, 3-Pin I2PAK Infineon　IPI032N06N3GAKSA1

Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:120 A
Maximum Drain Source Voltage:60 V
Maximum Drain Source Resistance:3.2 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:I2PAK (TO-262)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:188 W
Forward Diode Voltage:1.2V
CODE No.:892-2090

Order No.	64-1777-65
Model No.	IPI032N06N3GAKSA1
Standard price	JPY: 1,520 USD: 9.54 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(5pieces)

Stock in Japan	-