64-1735-31 ［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF
FeaturesFeatures class="init">
［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF 64-1735-31 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
64-1735-31 ［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF
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特徴
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:59 A
- Maximum Drain Source Voltage:75 V
- Maximum Drain Source Resistance:11.2 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:99 W
- Number of Elements per Chip:1
- CODE No.:879-3331
-
Order No.Order No.ss="init">
［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF 64-1735-31 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
64-1735-31 ［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF
-
特徴
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:59 A
- Maximum Drain Source Voltage:75 V
- Maximum Drain Source Resistance:11.2 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:99 W
- Number of Elements per Chip:1
- CODE No.:879-3331
-
アズワン品番
64-1735-31
Model No.
IRFR7746PBF
標準価格
JPY: 1,150
USD: 7.16
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(10pieces)
Stock in Japan
-
64-1735-31 ［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF
特徴
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:59 A
- Maximum Drain Source Voltage:75 V
- Maximum Drain Source Resistance:11.2 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:99 W
- Number of Elements per Chip:1
- CODE No.:879-3331
Order No.Order No.ss="init">
64-1735-31 ［Discontinued］IRFR7746PBF N-Channel MOSFET, 59 A, 75 V HEXFET, 3-Pin DPAK Infineon IRFR7746PBF特徴
仕様
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