64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
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[Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】 アズワン Contact us
Infineon 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
特徴
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:246 A
- Maximum Drain Source Voltage:75 V
- Maximum Drain Source Resistance:2.6 mΩ
- Maximum Gate Threshold Voltage:3.7V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:375 W
- Width:4.83mm
- CODE No.:879-3315
Order No. 64-1735-24 Model No. IRFB7730PBF Standard price JPY: 1,600 USD: 10.04 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1bag(5pieces)
Stock in Japan -
![[Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF](https://aimg.as-1.co.jp/c/64/1735/24/64173523.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)