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［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
AXEL GLOBALAXEL GLOBALnit">
［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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AXEL GLOBAL
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Discrete Semiconductors
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
AXEL GLOBAL
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Lab Instruments & Supplies
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RS Components
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
Infineon
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
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Features
N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:246 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:2.6 mΩ
Maximum Gate Threshold Voltage:3.7V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TO-220AB
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:375 W
Width:4.83mm
CODE No.:879-3315
Order No.Order No.ss="init">
［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
How to use
English
China
Indonesia
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すべてのカテゴリ
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Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
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Food Sanitation & Inspection
Office Supplies and Stationery
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AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
Infineon
64-1735-24 ［Discontinued］IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
印刷
PDF
特徴
N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:246 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:2.6 mΩ
Maximum Gate Threshold Voltage:3.7V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TO-220AB
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:375 W
Width:4.83mm
CODE No.:879-3315
アズワン品番
64-1735-24
型番
IRFB7730PBF
標準価格
JPY:
1,600
USD:
10.04
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(5pieces)
在庫数
-
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