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  • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
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  • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
Infineon

64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF

  • PrintPrintlass="init"> [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
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    • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
    • AXEL GLOBAL
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    • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
    Infineon

    64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF

    • 印刷
    • PDF
    • [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF

    特徴

    • N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

    Spec

    • Quantity:1bag(5pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:246 A
    • Maximum Drain Source Voltage:75 V
    • Maximum Drain Source Resistance:2.6 mΩ
    • Maximum Gate Threshold Voltage:3.7V
    • Minimum Gate Threshold Voltage:2.1V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:TO-220AB
    • Mounting Type:Through Hole
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:375 W
    • Width:4.83mm
    • CODE No.:879-3315
    •  
    Order No. 64-1735-24
    Model No. IRFB7730PBF
    Standard price JPY: 1,600 USD: 10.04
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    Quantity 1bag(5pieces)
      Discontinued
    Stock in Japan -

    This page is the page of [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.This page is the page of [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.ET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF 64-1735-24 【AXEL GLOBAL】 アズワン

    AS ONE AS ONE

    取扱点数300万点
    How to use
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    Contact us
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    • AXEL GLOBAL
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    • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • 64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF
    Infineon

    64-1735-24 [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF

    • 印刷
    • PDF
    • [Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon IRFB7730PBF

    特徴

    • N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

    仕様

    • Quantity:1bag(5pieces)
    • Channel Type:N
    • Maximum Continuous Drain Current:246 A
    • Maximum Drain Source Voltage:75 V
    • Maximum Drain Source Resistance:2.6 mΩ
    • Maximum Gate Threshold Voltage:3.7V
    • Minimum Gate Threshold Voltage:2.1V
    • Maximum Gate Source Voltage:-20 V, +20 V
    • Package Type:TO-220AB
    • Mounting Type:Through Hole
    • Pin Count:3
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:375 W
    • Width:4.83mm
    • CODE No.:879-3315
    •  
    アズワン品番 64-1735-24
    型番 IRFB7730PBF
    標準価格 JPY: 1,600 USD: 10.04
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    入り数 1bag(5pieces)
      <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
    在庫数 -

    [$1][Discontinued]IRFB7730PBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin TO-220AB Infineon[/$1]

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