64-1735-22 ［Discontinued］IRF9389TRPBF Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9389TRPBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.6 A, 6.8 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:40 mΩ, 103 mΩ
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Transistor Material:Si
- CODE No.:165-5525
| Order No. | 64-1735-22 | |
|---|---|---|
| Model No. | IRF9389TRPBF | |
| Standard price |
JPY: 102,000
USD: 634.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |