64-1714-60 ［Discontinued］STH175N4F6-2AG N-Channel MOSFET, 120 A, 40 V STripFET F6, 3-Pin H2PAK STMicroelectronics STH175N4F6-2AG
Features
- N-Channel STripFET™ F6, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:2.4 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Typical Gate Charge @ Vgs:130 nC @ 10 V
- CODE No.:165-5563
| Order No. | 64-1714-60 | |
|---|---|---|
| Model No. | STH175N4F6-2AG | |
| Standard price |
JPY: 132,000
USD: 828.00
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |