64-1709-87 MMIX1T550N055T2 N-Channel MOSFET, 550 A, 55 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1T550N055T2
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:550 A
- Maximum Drain Source Voltage:55 V
- Maximum Drain Source Resistance:1.3 mΩ
- Maximum Gate Threshold Voltage:3.8V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 W
- Number of Elements per Chip:1
- CODE No.:875-2500
| Order No. | 64-1709-87 | |
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| Model No. | MMIX1T550N055T2 | |
| Standard price |
JPY: 10,300
USD: 64.09
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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