64-1709-85 [Discontinued]MMIX1F420N10T N-Channel MOSFET, 334 A, 100 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1F420N10T
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:334 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:2.6 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:680 W
- Minimum Operating Temperature:-55 °C
- CODE No.:875-2497
| Order No. | 64-1709-85 | |
|---|---|---|
| Model No. | MMIX1F420N10T | |
| Standard price |
JPY: 4,500
USD: 28.00
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]MMIX1F420N10T N-Channel MOSFET, 334 A, 100 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1F420N10T](https://aimg.as-1.co.jp/c/64/1709/85/64170984.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)