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IXYS

64-1709-83　［Discontinued］MMIX1F160N30T N-Channel MOSFET, 100 A, 300 V GigaMOS, HiperFET, 24-Pin SMPD IXYS　MMIX1F160N30T

Features

  • N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:100 A
  • Maximum Drain Source Voltage:300 V
  • Maximum Drain Source Resistance:20 mΩ
  • Maximum Gate Threshold Voltage:5V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:SMPD
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:570 W
  • Number of Elements per Chip:1
  • CODE No.:875-2487
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Order No. 64-1709-83
Model No. MMIX1F160N30T
Standard price JPY: 4,160 USD: 25.88
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -

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