64-1709-82 ［Discontinued］MMIX1F160N30T N-Channel MOSFET, 100 A, 300 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1F160N30T
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:300 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:570 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4792
| Order No. | 64-1709-82 | |
|---|---|---|
| Model No. | MMIX1F160N30T | |
| Standard price |
JPY: 76,100
USD: 473.49
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
|
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| Stock in Japan | - | |