64-1709-81 MMIX1F180N25T N-Channel MOSFET, 132 A, 250 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1F180N25T
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:132 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:13 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:570 W
- Typical Turn-On Delay Time:35 ns
- CODE No.:875-2481
| Order No. | 64-1709-81 | |
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| Model No. | MMIX1F180N25T | |
| Standard price |
JPY: 9,990
USD: 62.62
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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