64-1709-80 MMIX1F180N25T N-Channel MOSFET, 132 A, 250 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1F180N25T
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:132 A
- Maximum Drain Source Voltage:250 V
- Maximum Drain Source Resistance:13 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:570 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-1770
| Order No. | 64-1709-80 | |
|---|---|---|
| Model No. | MMIX1F180N25T | |
| Standard price |
JPY: 166,000
USD: 1,032.85
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|