64-1709-77 MMIX1T600N04T2 N-Channel MOSFET, 600 A, 40 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1T600N04T2
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:600 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:1.3 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 W
- Forward Transconductance:150S
- CODE No.:875-2475
| Order No. | 64-1709-77 | |
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| Model No. | MMIX1T600N04T2 | |
| Standard price |
JPY: 7,800
USD: 48.53
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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