64-1709-76 MMIX1T600N04T2 N-Channel MOSFET, 600 A, 40 V GigaMOS, HiperFET, 24-Pin SMPD IXYS MMIX1T600N04T2
Features
- N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:600 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:1.3 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SMPD
- Mounting Type:Surface Mount
- Pin Count:24
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 W
- Forward Diode Voltage:1.2V
- CODE No.:168-4791
| Order No. | 64-1709-76 | |
|---|---|---|
| Model No. | MMIX1T600N04T2 | |
| Standard price |
JPY: 146,000
USD: 915.19
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(20pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|