Super Junction (SJ) MOSFET. These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology. Low EMI Low power loss through high speed switching and low on-resistance
Spec
Quantity:1set(5pieces)
Channel Type:N
Maximum Continuous Drain Current:11 A
Maximum Drain Source Voltage:600 V
Maximum Drain Source Resistance:360 mΩ
Maximum Gate Threshold Voltage:4V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:TO-220F
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:31 W
Maximum Operating Temperature:+150 °C
CODE No.:871-5038
Order No.Order No.ss="init">
［Discontinued］MMF60R360PTH N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH 64-1687-26 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Super Junction (SJ) MOSFET. These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology. Low EMI Low power loss through high speed switching and low on-resistance
Super Junction (SJ) MOSFET. These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology. Low EMI Low power loss through high speed switching and low on-resistance
