64-1661-29 ［Discontinued］IRFU13N20DPBF N-Channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK Infineon IRFU13N20DPBF
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［Discontinued］IRFU13N20DPBF N-Channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK Infineon IRFU13N20DPBF 64-1661-29 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 64-1661-29 ［Discontinued］IRFU13N20DPBF N-Channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK Infineon IRFU13N20DPBF
Features
- N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(75pieces)
- Channel Type:N
- Maximum Continuous Drain Current:13 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:235 mΩ
- Maximum Gate Threshold Voltage:5.5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:IPAK (TO-251)
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:110 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-8694
Order No. 64-1661-29 Model No. IRFU13N20DPBF Standard price JPY: 9,650 USD: 60.53 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(75pieces) 
Stock in Japan - -
