64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
FeaturesFeatures class="init">
[Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
特徴
- N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:210 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.6 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:330 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-9695
-
Order No.Order No.ss="init">
[Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
特徴
- N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:210 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.6 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:330 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-9695
-
アズワン品番
64-1661-05
Model No.
IRF2204PBF
標準価格
JPY: 11,570
USD: 71.99
Excange rate 1USD= 160.72JPY
Valid price in Japan
QuantityQuantityass="init">
[Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
特徴
- N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:210 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.6 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:330 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-9695
-
アズワン品番
64-1661-05
型番
IRF2204PBF
標準価格
JPY: 11,570
USD: 71.99
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1set(50pieces)
在庫数
-
64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
特徴
- N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:210 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.6 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:330 W
- Minimum Operating Temperature:-55 °C
- CODE No.:145-9695
Order No.Order No.ss="init">
64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF特徴
仕様
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![[Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF](https://aimg.as-1.co.jp/c/64/1661/05/64166105.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)