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Contact usFind by keyword"init"> [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
Infineon

64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

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  • [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

FeaturesFeatures class="init"> [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
  • AXEL GLOBAL
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
Infineon

64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

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  • [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

特徴

  • N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:210 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:3.6 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:330 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-9695
  •  
Order No.Order No.ss="init"> [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
  • AXEL GLOBAL
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  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
Infineon

64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

  • 印刷
  • PDF
  • [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

特徴

  • N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:210 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:3.6 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:330 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-9695
  •  
アズワン品番 64-1661-05
Model No. IRF2204PBF
標準価格 JPY: 11,570 USD: 71.99
Excange rate 1USD= 160.72JPY
Valid price in Japan
QuantityQuantityass="init"> [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF 64-1661-05 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF
Infineon

64-1661-05 [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

  • 印刷
  • PDF
  • [Discontinued]IRF2204PBF N-Channel MOSFET, 210 A, 40 V HEXFET, 3-Pin TO-220AB Infineon IRF2204PBF

特徴

  • N-Channel Power MOSFET 40V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:210 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:3.6 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:330 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-9695
  •  
アズワン品番 64-1661-05
型番 IRF2204PBF
標準価格 JPY: 11,570 USD: 71.99
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数 1set(50pieces)
  Discontinued
在庫数 -

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