64-1655-62 [Discontinued]FDMD82100 Dual N-Channel MOSFET, 25 A, 100 V PowerTrench, 12-Pin PQFN ON Semiconductor FDMD82100
Features
- PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:25 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:35 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Transistor Configuration:Series
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Length:5.1mm
- CODE No.:864-8243
| Order No. | 64-1655-62 | |
|---|---|---|
| Model No. | FDMD82100 | |
| Standard price |
JPY: 1,700
USD: 10.66
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDMD82100 Dual N-Channel MOSFET, 25 A, 100 V PowerTrench, 12-Pin PQFN ON Semiconductor FDMD82100](https://aimg.as-1.co.jp/c/64/1655/62/64165561.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)