64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ
Features
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
SpecSpec class="init">
[Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ 64-1655-47 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:50 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MLP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.2 W, 800 mW
- Series:PowerTrench
- CODE No.:864-8186
-
Order No.Order No.ss="init">
[Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ 64-1655-47 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:50 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MLP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.2 W, 800 mW
- Series:PowerTrench
- CODE No.:864-8186
-
アズワン品番
64-1655-47
型番
FDMB2308PZ
Standard price
JPY: 1,870
USD: 11.73
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(5pieces)
[Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ 64-1655-47 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:50 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MLP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.2 W, 800 mW
- Series:PowerTrench
- CODE No.:864-8186
-
アズワン品番
64-1655-47
型番
FDMB2308PZ
標準価格
JPY: 1,870
USD: 11.73
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(5pieces)
Stock in Japan
-
64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:50 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MLP
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.2 W, 800 mW
- Series:PowerTrench
- CODE No.:864-8186
Order No.Order No.ss="init">
64-1655-47 [Discontinued]FDMB2308PZ Dual P-Channel MOSFET, 7 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor FDMB2308PZ特徴
仕様
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