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Infineon

64-1652-77　［Discontinued］Infineon IRGS6B60KDPBF IGBT, 18 A 600 V, 3-Pin D2PAK (TO-263)　IRGS6B60KDPBF

Features

  • Co-Pack IGBT up to 20A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

Spec

  • Quantity:1set(50pieces)
  • Maximum Continuous Collector Current:18 A
  • Maximum Collector Emitter Voltage:600 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:90 W
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Channel Type:N
  • Pin Count:3
  • Switching Speed:8 → 30kHz
  • Transistor Configuration:Single
  • Length:10.67mm
  • Width:9.65mm
  • Height:4.83mm
  • Dimensions:10.67 x 9.65 x 4.83mm
  • Minimum Operating Temperature:-55 °C
  • CODE No.:145-9677
  •  
Order No. 64-1652-77
Model No. IRGS6B60KDPBF
Standard price JPY: 14,620 USD: 91.64
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
  Discontinued
Stock in Japan -

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