64-1652-67 ［Discontinued］Infineon IRG4IBC20FDPBF IGBT, 14.3 A 600 V, 3-Pin TO-220FP IRG4IBC20FDPBF
Features
- Co-Pack IGBT up to 20A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:14.3 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:34 W
- Package Type:TO-220FP
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1 → 8kHz
- Transistor Configuration:Single
- Length:10.75mm
- Width:4.83mm
- Height:16.13mm
- Dimensions:10.75 x 4.83 x 16.13mm
- Minimum Operating Temperature:-55 °C
- CODE No.:864-0921
| Order No. | 64-1652-67 | |
|---|---|---|
| Model No. | IRG4IBC20FDPBF | |
| Standard price |
JPY: 1,870
USD: 11.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |