64-1652-66 [Discontinued]Infineon IRG4IBC20FDPBF IGBT, 14.3 A 600 V, 3-Pin TO-220FP IRG4IBC20FDPBF
Features
- Co-Pack IGBT up to 20A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1set(50pieces)
- Maximum Continuous Collector Current:14.3 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:34 W
- Package Type:TO-220FP
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1 → 8kHz
- Transistor Configuration:Single
- Length:10.75mm
- Width:4.83mm
- Height:16.13mm
- Dimensions:10.75 x 4.83 x 16.13mm
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5425
| Order No. | 64-1652-66 | |
|---|---|---|
| Model No. | IRG4IBC20FDPBF | |
| Standard price |
JPY: 16,700
USD: 104.68
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]Infineon IRG4IBC20FDPBF IGBT, 14.3 A 600 V, 3-Pin TO-220FP IRG4IBC20FDPBF](https://aimg.as-1.co.jp/c/64/1652/66/64165266.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)