64-1652-60 ［Discontinued］Infineon IRG4BC30FD1PBF IGBT, 31 A 600 V, 3-Pin TO-220AB IRG4BC30FD1PBF
Features
- Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1set(50pieces)
- Maximum Continuous Collector Current:31 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:100 W
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1 → 8kHz
- Transistor Configuration:Single
- Length:10.54mm
- Width:4.69mm
- Height:15.24mm
- Dimensions:10.54 x 4.69 x 15.24mm
- Minimum Operating Temperature:-55 °C
- CODE No.:145-8866
| Order No. | 64-1652-60 | |
|---|---|---|
| Model No. | IRG4BC30FD1PBF | |
| Standard price |
JPY: 16,400
USD: 102.80
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |