64-1630-56 STH150N10F7-2 N-Channel MOSFET, 110 A, 100 V DeepGate, STripFET, 3-Pin H2PAK STMicroelectronics STH150N10F7-2
Features
- N-Channel STripFET™ DeepGate™, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:110 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:3.9 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:250 W
- Number of Elements per Chip:1
- CODE No.:168-8819
| Order No. | 64-1630-56 | |
|---|---|---|
| Model No. | STH150N10F7-2 | |
| Standard price |
JPY: 575,000
USD: 3,604.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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