64-1630-32 [Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF
FeaturesFeatures class="init">
[Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF 64-1630-32 【AXEL GLOBAL】 アズワン
Contact us
STMicroelectronics
64-1630-32 [Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF
特徴
- IGBT Discretes, STMicroelectronics
Spec
- Quantity:1set(1000pieces)
- Maximum Continuous Collector Current:20 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:115 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:10.4mm
- Width:9.35mm
- Height:4.6mm
- Dimensions:10.4 x 9.35 x 4.6mm
- Minimum Operating Temperature:-55 °C
- CODE No.:168-8807
-
Order No.
64-1630-32
Model No.
STGB10H60DF
Standard price
JPY: 143,000
USD: 897.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
[Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF 64-1630-32 【AXEL GLOBAL】 アズワン
Contact us
STMicroelectronics
64-1630-32 [Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF
特徴
- IGBT Discretes, STMicroelectronics
仕様
- Quantity:1set(1000pieces)
- Maximum Continuous Collector Current:20 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:115 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:10.4mm
- Width:9.35mm
- Height:4.6mm
- Dimensions:10.4 x 9.35 x 4.6mm
- Minimum Operating Temperature:-55 °C
- CODE No.:168-8807
-
アズワン品番
64-1630-32
型番
STGB10H60DF
標準価格
JPY: 143,000
USD: 897.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1set(1000pieces)
在庫数
-
64-1630-32 [Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF
特徴
- IGBT Discretes, STMicroelectronics
Spec
- Quantity:1set(1000pieces)
- Maximum Continuous Collector Current:20 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:115 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:10.4mm
- Width:9.35mm
- Height:4.6mm
- Dimensions:10.4 x 9.35 x 4.6mm
- Minimum Operating Temperature:-55 °C
- CODE No.:168-8807
| Order No. | 64-1630-32 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | STGB10H60DF | |||||||||||||||
| Standard price |
JPY: 143,000
USD: 897.00
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|||||||||||||||
QuantityQuantityass="init">
64-1630-32 [Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF特徴
仕様
| ||||||||||||||||
![[Discontinued]STMicroelectronics STGB10H60DF IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) STGB10H60DF](https://aimg.as-1.co.jp/c/64/1630/32/64163032.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)