64-1599-34 ［Discontinued］IPB35N10S3L26ATMA1 N-Channel MOSFET, 35 A, 100 V OptiMOS T, 3-Pin D2PAK Infineon IPB35N10S3L26ATMA1
Features
- Infineon OptiMOS™T Power MOSFETs. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant)
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:26.3 mΩ
- Maximum Gate Threshold Voltage:2.4V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:71 W
- Typical Turn-On Delay Time:6 ns
- CODE No.:857-8671
| Order No. | 64-1599-34 | |
|---|---|---|
| Model No. | IPB35N10S3L26ATMA1 | |
| Standard price |
JPY: 101,000
USD: 633.11
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
||
| Stock in Japan | - | |