Name: 64-1599-32 ［Discontinued］IPB100N04S4H2ATMA1 N-Channel MOSFET, 100 A, 40 V OptiMOS T2, 3-Pin D2PAK Infineon IPB100N04S4H2ATMA1
Price: 808.86 USD

Features

Infineon OptiMOS™ T2 Power MOSFETs. Infineon s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant)

Spec

Quantity:1set(1000pieces)
Channel Type:N
Maximum Continuous Drain Current:100 A
Maximum Drain Source Voltage:40 V
Maximum Drain Source Resistance:2.7 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:D2PAK (TO-263)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:115 W
Number of Elements per Chip:1
CODE No.:857-8652

Order No.

64-1599-32

Model No.

IPB100N04S4H2ATMA1

Standard price

JPY: 130,000 USD: 808.86

Excange rate 1USD= 160.72JPY
Valid price in Japan

Quantity

1set(1000pieces)

Stock in Japan