64-1598-98 ［Discontinued］Infineon 600V 30A, Silicon Junction Diode, 3-Pin D2PAK IDB30E60ATMA1 IDB30E60ATMA1
Features
- Fast Switching Emitter Controlled Diodes, Infineon. The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.. Rapid 1 diode switches between 18kHz and 40kHz 1.35V temperature-stable forward voltage Ideal for Power Factor Correction (PFC) topologies The Rapid 2 diode switches between 40 kHz and 100 kHz Low reverse recovery charge: forward voltage ratio for BiC performance Low reverse recovery time Low turn-on losses on the boost switch Ultra-fast Diode 600 V/1200 V Emitter Controlled technology Qualified according to JEDEC Standard Good EMI behaviour Low conduction losses Easy paralleling
Spec
- Quantity:1set(1000pieces)
- Diode Configuration:Single
- Number of Elements per Chip:1
- Peak Reverse Repetitive Voltage:600V
- Mounting Type:Surface Mount
- Package Type:D2PAK (TO-263)
- Diode Technology:Silicon Junction
- Pin Count:3
- Maximum Forward Voltage Drop:2V
- Peak Reverse Recovery Time:178ns
- Peak Non-Repetitive Forward Surge Current:117A
- CODE No.:857-8514
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64-1598-98 ［Discontinued］Infineon 600V 30A, Silicon Junction Diode, 3-Pin D2PAK IDB30E60ATMA1 IDB30E60ATMA1特徴
仕様
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