64-1598-95 BSP125H6327XTSA1 N-Channel MOSFET, 120 mA, 600 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP125H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 mA
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:45 Ω
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.8 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-5811
| Order No. | 64-1598-95 | |
|---|---|---|
| Model No. | BSP125H6327XTSA1 | |
| Standard price |
JPY: 56,500
USD: 354.17
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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