64-1598-92 ［Discontinued］BG3130RH6327XTSA1 N-Channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363 Infineon BG3130RH6327XTSA1
Features
- Infineon Dual-gate MOSFET Tetrode. Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:25 mA
- Maximum Drain Source Voltage:8 V
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:+6 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:MOSFET Tetrode
- Maximum Power Dissipation:200 mW
- Height:0.8mm
- CODE No.:857-8475
| Order No. | 64-1598-92 | |
|---|---|---|
| Model No. | BG3130RH6327XTSA1 | |
| Standard price |
JPY: 48,500
USD: 304.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |