Infineon

64-1597-15 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1

FeaturesFeatures class="init"> [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1 64-1597-15 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

64-1597-15 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1

特徴

  • Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

  • Quantity:1set(500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:100 A
  • Maximum Drain Source Voltage:75 V
  • Maximum Drain Source Resistance:3.4 mΩ
  • Maximum Gate Threshold Voltage:3.8V
  • Minimum Gate Threshold Voltage:2.3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Typical Turn-Off Delay Time:40 ns
  • CODE No.:857-6833
  •  
Order No.Order No.ss="init"> [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1 64-1597-15 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

64-1597-15 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1

特徴

  • Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

  • Quantity:1set(500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:100 A
  • Maximum Drain Source Voltage:75 V
  • Maximum Drain Source Resistance:3.4 mΩ
  • Maximum Gate Threshold Voltage:3.8V
  • Minimum Gate Threshold Voltage:2.3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Typical Turn-Off Delay Time:40 ns
  • CODE No.:857-6833
  •  
アズワン品番 64-1597-15
Model No. IPP034NE7N3GXKSA1
標準価格 JPY: 110,000 USD: 690.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1set(500pieces)
  DiscontinuedDiscontinuedlass= [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1 64-1597-15 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

64-1597-15 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1

特徴

  • Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

仕様

  • Quantity:1set(500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:100 A
  • Maximum Drain Source Voltage:75 V
  • Maximum Drain Source Resistance:3.4 mΩ
  • Maximum Gate Threshold Voltage:3.8V
  • Minimum Gate Threshold Voltage:2.3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Typical Turn-Off Delay Time:40 ns
  • CODE No.:857-6833
  •  
アズワン品番 64-1597-15
型番 IPP034NE7N3GXKSA1
標準価格 JPY: 110,000 USD: 690.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1set(500pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -