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[Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1 64-1597-14 【AXEL GLOBAL】 アズワン
取扱点数300万点
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[Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1 64-1597-14 【AXEL GLOBAL】 アズワン
取扱点数300万点
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64-1597-14 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1
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64-1597-14 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1
Infineon
64-1597-14 [Discontinued]IPP034NE7N3GXKSA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 3-Pin TO-220 Infineon IPP034NE7N3GXKSA1
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Features
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
Quantity:1set(50pieces)
Channel Type:N
Maximum Continuous Drain Current:100 A
Maximum Drain Source Voltage:75 V
Maximum Drain Source Resistance:3.4 mΩ
Maximum Gate Threshold Voltage:3.8V
Minimum Gate Threshold Voltage:2.3V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:TO-220
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:214 W
Transistor Material:Si
CODE No.:145-9673
Order No.
64-1597-14
Model No.
IPP034NE7N3GXKSA1
Standard price
JPY:
14,800
USD:
92.84
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(50pieces)
在庫数
-
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