64-1592-22 ［Discontinued］IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:83 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:10.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Dimensions:10.36 x 4.52 x 9.45mm
- CODE No.:165-5164
| Order No. | 64-1592-22 | |
|---|---|---|
| Model No. | IPI111N15N3GAKSA1 | |
| Standard price |
JPY: 21,000
USD: 131.64
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
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| Stock in Japan | - | |