64-1592-22 [Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
FeaturesFeatures class="init">
[Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1 64-1592-22 【AXEL GLOBAL】 アズワン
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Infineon
64-1592-22 [Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:83 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:10.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Dimensions:10.36 x 4.52 x 9.45mm
- CODE No.:165-5164
-
Order No.
64-1592-22
Model No.
IPI111N15N3GAKSA1
Standard price
JPY: 21,000
USD: 130.66
Excange rate 1USD= 160.72JPY
Valid price in Japan
QuantityQuantityass="init">
[Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1 64-1592-22 【AXEL GLOBAL】 アズワン
Contact us
Infineon
64-1592-22 [Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
仕様
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:83 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:10.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Dimensions:10.36 x 4.52 x 9.45mm
- CODE No.:165-5164
-
アズワン品番
64-1592-22
型番
IPI111N15N3GAKSA1
標準価格
JPY: 21,000
USD: 130.66
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1set(50pieces)
在庫数
-
64-1592-22 [Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1
特徴
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:83 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:10.8 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:I2PAK (TO-262)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:214 W
- Dimensions:10.36 x 4.52 x 9.45mm
- CODE No.:165-5164
| Order No. | 64-1592-22 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | IPI111N15N3GAKSA1 | |||||||||||||||
| Standard price |
JPY: 21,000
USD: 130.66
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|||||||||||||||
QuantityQuantityass="init">
64-1592-22 [Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1特徴
仕様
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![[Discontinued]IPI111N15N3GAKSA1 N-Channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin I2PAK Infineon IPI111N15N3GAKSA1](https://aimg.as-1.co.jp/c/64/1592/22/64159222.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)