64-1592-13 ［Discontinued］IPD50R1K4CEBTMA1 N-Channel MOSFET, 3.1 A, 550 V CoolMOS CE, 3-Pin DPAK Infineon IPD50R1K4CEBTMA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.1 A
- Maximum Drain Source Voltage:550 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:25 W
- Typical Input Capacitance @ Vds:178 pF @ 100 V
- CODE No.:857-4607
| Order No. | 64-1592-13 | |
|---|---|---|
| Model No. | IPD50R1K4CEBTMA1 | |
| Standard price |
JPY: 61,900
USD: 385.14
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
||
| Stock in Japan | - | |