64-1591-99 ［Discontinued］IPB80P04P4L06ATMA1 P-Channel MOSFET, 80 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon IPB80P04P4L06ATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(1000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:10.8 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:88 W
- Typical Turn-Off Delay Time:61 ns
- CODE No.:857-4552
| Order No. | 64-1591-99 | |
|---|---|---|
| Model No. | IPB80P04P4L06ATMA1 | |
| Standard price |
JPY: 120,000
USD: 746.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |