64-1503-37 [Discontinued]ON Semiconductor NGTB40N60L2WG IGBT, 80 A 600 V, 3-Pin TO-247 NGTB40N60L2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:417 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.26mm
- Width:5.3mm
- Height:21.08mm
- Dimensions:16.26 x 5.3 x 21.08mm
- Minimum Operating Temperature:-55 °C
- CODE No.:842-7901
| Order No. | 64-1503-37 | |
|---|---|---|
| Model No. | NGTB40N60L2WG | |
| Standard price |
JPY: 1,460
USD: 9.08
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB40N60L2WG IGBT, 80 A 600 V, 3-Pin TO-247 NGTB40N60L2WG](https://aimg.as-1.co.jp/c/64/1503/37/64150336.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)