64-1503-35 ON Semiconductor NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247 NGTB35N65FL2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:70 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:300 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.26mm
- Width:5.3mm
- Height:21.08mm
- Dimensions:16.26 x 5.3 x 21.08mm
- Maximum Operating Temperature:+175 °C
- CODE No.:842-7898
| Order No. | 64-1503-35 | |
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| Model No. | NGTB35N65FL2WG | |
| Standard price |
JPY: 2,790
USD: 17.36
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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