64-1503-33 ［Discontinued］ON Semiconductor NGTB35N60FL2WG IGBT, 70 A 600 V, 3-Pin TO-247 NGTB35N60FL2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:70 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:300 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.26mm
- Width:5.3mm
- Height:21.08mm
- Dimensions:16.26 x 5.3 x 21.08mm
- Minimum Operating Temperature:-55 °C
- CODE No.:842-7894
| Order No. | 64-1503-33 | |
|---|---|---|
| Model No. | NGTB35N60FL2WG | |
| Standard price |
JPY: 1,020
USD: 6.35
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
||
| Stock in Japan | - | |