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Infineon

64-1475-12　IRF1010EZPBF N-Channel MOSFET, 84 A, 60 V HEXFET, 3-Pin TO-220AB Infineon　IRF1010EZPBF

Features

  • N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:84 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:8.5 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:140 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:165-5778
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Order No. 64-1475-12
Model No. IRF1010EZPBF
Standard price JPY: 6,990 USD: 43.82
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
Stock in Japan
Supplier Stock

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