Infineon

64-1472-98 [Discontinued]IRLR3103TRPBF N-Channel MOSFET, 55 A, 30 V HEXFET, 3-Pin DPAK Infineon IRLR3103TRPBF

Features

  • N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1set(2000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:55 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:24 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-16 V, +16 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:107 W
  • Maximum Operating Temperature:+175 °C
  • CODE No.:145-9502
  •  
Order No.Order No.ss="init"> [Discontinued]IRLR3103TRPBF N-Channel MOSFET, 55 A, 30 V HEXFET, 3-Pin DPAK Infineon IRLR3103TRPBF 64-1472-98 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

64-1472-98 [Discontinued]IRLR3103TRPBF N-Channel MOSFET, 55 A, 30 V HEXFET, 3-Pin DPAK Infineon IRLR3103TRPBF

特徴

  • N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(2000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:55 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:24 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-16 V, +16 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:107 W
  • Maximum Operating Temperature:+175 °C
  • CODE No.:145-9502
  •  
アズワン品番 64-1472-98
Model No. IRLR3103TRPBF
標準価格 JPY: 121,000 USD: 759.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1set(2000pieces)
  DiscontinuedDiscontinuedlass= [Discontinued]IRLR3103TRPBF N-Channel MOSFET, 55 A, 30 V HEXFET, 3-Pin DPAK Infineon IRLR3103TRPBF 64-1472-98 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

64-1472-98 [Discontinued]IRLR3103TRPBF N-Channel MOSFET, 55 A, 30 V HEXFET, 3-Pin DPAK Infineon IRLR3103TRPBF

特徴

  • N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1set(2000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:55 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:24 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-16 V, +16 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:107 W
  • Maximum Operating Temperature:+175 °C
  • CODE No.:145-9502
  •  
アズワン品番 64-1472-98
型番 IRLR3103TRPBF
標準価格 JPY: 121,000 USD: 759.00
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1set(2000pieces)
  Discontinued
在庫数 -