Infineon

64-1472-94　［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon　IRLR2908TRPBF

Features

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1bag(10pieces)
Channel Type:N
Maximum Continuous Drain Current:39 A
Maximum Drain Source Voltage:80 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:120 W
Maximum Operating Temperature:+175 °C
CODE No.:830-3354

Order No. 64-1472-94

Model No. IRLR2908TRPBF

Standard price

JPY: 2,130 USD: 13.36

Excange rate 1USD= 159.42JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon　IRLR2908TRPBF 64-1472-94 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1472-94　［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon　IRLR2908TRPBF

印刷

特徴

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1bag(10pieces)
Channel Type:N
Maximum Continuous Drain Current:39 A
Maximum Drain Source Voltage:80 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:120 W
Maximum Operating Temperature:+175 °C
CODE No.:830-3354

アズワン品番	64-1472-94
型番	IRLR2908TRPBF
標準価格	JPY: 2,130 USD: 13.36 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(10pieces)

在庫数	-

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Countries and RegionsCountries and Regions> ［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon　IRLR2908TRPBF 64-1472-94 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

64-1472-94　［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon　IRLR2908TRPBF

印刷

特徴

N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1bag(10pieces)
Channel Type:N
Maximum Continuous Drain Current:39 A
Maximum Drain Source Voltage:80 V
Maximum Drain Source Resistance:30 mΩ
Maximum Gate Threshold Voltage:2.5V
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-16 V, +16 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:120 W
Maximum Operating Temperature:+175 °C
CODE No.:830-3354

アズワン品番	64-1472-94
型番	IRLR2908TRPBF
標準価格	JPY: 2,130 USD: 13.36 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(10pieces)

在庫数	-

[$1]［Discontinued］IRLR2908TRPBF N-Channel MOSFET, 39 A, 80 V HEXFET, 3-Pin DPAK Infineon[/$1]