64-1472-34 [Discontinued]STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P STGWT80H65FB
Features
- IGBT Discretes, STMicroelectronics
Spec
- Quantity:1set(30pieces)
- Maximum Continuous Collector Current:120 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:469 W
- Package Type:TO-3P
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:15.8mm
- Width:5mm
- Height:20.1mm
- Dimensions:15.8 x 5 x 20.1mm
- Minimum Operating Temperature:-55 °C
- CODE No.:168-8742
| Order No. | 64-1472-34 | |
|---|---|---|
| Model No. | STGWT80H65FB | |
| Standard price |
JPY: 34,700
USD: 217.51
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P STGWT80H65FB](https://aimg.as-1.co.jp/c/64/1472/34/64147234.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)